Hynix announces a 54 nm 1 Gbit DDR3 memory

Monday, October 12, 2009

Company Hynix Semiconductor announced the second generation DDR3 memory chips with a density of 1 Gbps, which is used when creating a 54 nm manufacturing process. The new chip is available in configurations x4 and x8, and its mass production began this month.

The second-generation DDR3 memory with a density of 1 Gbit manufactured by Hynix, running on the same level of tension in the 1.5 volts, and that the previous generation of chips. At the same time new solutions consume 30 percent less energy. As expected the manufacturer, it will reduce the power consumption of systems such as data centers, servers and supercomputers, as well as longer battery life for mobile devices.