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Samsung develops an ultrathin 30-nm flash memory with a capacity of 32 GB

Thursday, November 5, 2009

South Korean company Samsung has announced a new generation of NAND memory, which in the long term will significantly increase the capacity of hard drives in mobile devices. The new flash memory will be able to hold 32 GB of data in a single chip, and the thickness of the chip would cost less than 0,6 mm.



Such a result would be possible through the use of innovative blade "OEM" packages developed by professionals Samsung, which while retaining the same strength are only half as thick compared to the previous generation of buildings. Important role played by the fact that when you create a NAND flash memory using 30 nm manufacturing process.



Connection of these factors should help in the development of NAND memory, whose chips are 40 percent thinner and lighter than existing counterparts. And the use of a flash memory in smartphones, media players and other portable devices will further reduce their thickness.

Samsung itself is not yet a timetable for release of a new flash memory is also not specified and a list of its potential customers. However, one of them could well be the company Apple, known as the largest pit Samsung and often one of the first uses the latest developments in NAND technology.

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