Less than nine months have passed since then, as the company Hynix Semiconductor introduced a memory chip, manufactured on 54 nm technology and has a density of 1 Gbit. And now this South Korean manufacturer has announced the finalization of the world's first energy-efficient memory DDR2 DRAM, whose density is 2 Gb.
The new memory chip is made by the norms of a "thin" 40 nm-class process technology and has a measure of the operating voltage of 1.2 volts. The width of the bandwidth from the memory that is 4.26 GB / s in combination with 32-bit bus, the effective frequency is equal to 1066 MHz and power consumption of the new memory, according to Hynix, a 50 percent lower than in previous generation products.
All this makes the new memory DDR2 DRAM with a density of 2 Gbit quite suitable for use in mobile electronics, including smart phones and smartbuki, as well as Tablet PCs. According to the manufacturer, the mass production of new energy efficient memory will start in the first half of 2010.
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