Intel and Micron have created a 25 nm NAND with a recording density of 3 bits per cell

Wednesday, August 18, 2010

Intel and Micron Technology have developed the first examples of a more perfect type of flash memory NAND. The memory chips are made on 25 nm technology and the recording density in them is 3 bits per cell. It is a memory based on the "three-level cell" TLC (triple-level cell), in contrast to single-level SLC (single-level cell) with one bit per cell and MLC (multi-level cell) with two bits per cell.

Total module of the new Intel memory is 8 GB and it is 20% more compact than similar solutions of the previous generation. Such memory, according to Intel, is useful for mapping SD, USB drives, media players and other small consumer electronics. The company has already begun shipping the first samples of some of its partners.

Intel claims that its new memory has the highest capacity and small size in the industry. Thanks to the flash drives and cards will become more intensive, without increasing the size, says the company. By the end of this year the market has already come out device designed based on the new 25 nm chips from Intel and Micron. However, while Intel itself is unlikely to use it for its solid-state drives that are still in need of memory at a higher rate, but lower density.