Intel and Numonyx developed a multi-layer memory

Thursday, October 29, 2009

Intel and Numonyx announced a significant breakthrough in the creation of Phase Change Memory (PCM) - a new type of nonvolatile memory with the possibility of creating multi-layered arrays on a single chip. This will create a high-speed storage and memory with random access, which will have a higher density data storage, lower power consumption and miniature size.

In joint research companies were able to develop a method for forming a multilayer memory based on phase transitions, be able to produce a vertically integrated cell PCMS. Each includes two elements that are in parallel layers: PCM and the switching module Ovonic Threshold Switch (OTS). Together PCMS form a junction array. Ability to impose layers of PCMS cells to each other can increase the density of information storage, while maintaining the characteristics of single-layer phase memory.

Phase memory cells are created by combining elements of data storage and switching element. Use PCM as an element of data storage has long sought, but has previously been used several types of switching elements, which restricts the arrays on the size and efficiency. Numonyx and Intel's engineers were able to use thin-film dvuhterminalny OTS as the switching element. It corresponds to the physical and electrical properties of PCM, opening the possibility of scaling. Thanks to this innovation made possible the creation of multi-memory.

Intel and Numonyx connect the memory cell with CMOS structures, which provide the logic functions and signal conversion. The developers have demonstrated that the dumping of information stored in the cells, is carried out for 9 ns, and the memory itself does not lose properties, even after 1 million erase / write cycles. More information will be contained in the joint report, "The multilayer nodal memory based on phase transitions» (A Stackable Cross Point Phase Change Memory), presented at the International Electron Devices Meeting 2009 in Baltimore (Maryland) on December 9.