Toshiba develops NAND memory DDR Toggle Mode, and promises more speed SSD

Friday, August 13, 2010

Japanese corporation Toshiba (more precisely, its division Toshiba America Electronic Components, TAEC) introduced its first NAND flash memory chips such as DDR Toggle Mode, made by rules of 32 nm process technology. It is noted that these chips use a new interface that allows you to reduce power consumption and a 3.3 times increase the speed of information transmission.

The new NAND memory DDR Toggle Mode 1.0 will be available in versions with a single level (SLC) and multilevel (MLC) cells and is able to achieve performance of 133 MT / s (million transfers per second), whereas the standard SLC NAND memory is limited to the same period, total "40 MT / s.

Thus, NAND memory DDR Toggle Mode 1.0 is well suited for use in high-performance solid state drives, especially in the corporate class. However, decisions of this kind can certainly find a place in the home user computers.

Toshiba intends to start supply of NAND flash memory DDR Toggle Mode 1.0 in SLC variant with a density of 32, 64 and 128 Gbps, and the MLC versions - with a density of 64, 128 and 256 Gb. Note also that the Japanese manufacturer is already working on NAND memory DDR Toggle Mode version 2.0, which aims to achieve three-fold increase in the rate of the interface compared with the first generation.